2025/07/09 by T. I. Milenov, Ivalina Avramova, Vladimir Mehandziev +14 · 1 voice
Engineering · Materials Science · #Diamond and Carbon-based Materials Research #Graphene research and applications #Silicon Carbide Semiconductor Technologies
paper · pdf · doi:10.3390/ma18143239
openalex publication_date 2025/07/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
This work presents a comparative analysis of the results of silicon carbide synthesis through the carbonization of Si (001) and Si (111) substrates in the temperature range 1130-1140 °C. The synthesis involved chemical vapor deposition utilizing thermally stimulated methane reduction in a hydrogen gas stream. The experiments employed an Oxford Nanofab Plasmalab System 100 apparatus on substrates from which the native oxide was removed according to established protocols. To minimize random experimental variations (e.g., deviations from set parameters), short synthesis durations of 3 and 5 min were analyzed. The resultant thin films underwent evaluations through several techniques, including X-ray photoelectron spectroscopy, X-ray diffractometry, optical emission spectroscopy with glow discharge, and transmission electron microscopy. A comparison and analysis were conducted between the results from both substrate orientations.