Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots

2022/11/11 by Xiqiao Wang, Ehsan Khatami, Fan Fei +6 · 1 voice · 15 citations
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena

paper · pdf · doi:10.1038/s41467-022-34220-w

openalex publication_date 2022/11/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/23

Abstract

The Hubbard model is an essential tool for understanding many-body physics in condensed matter systems. Artificial lattices of dopants in silicon are a promising method for the analog quantum simulation of extended Fermi-Hubbard Hamiltonians in the strong interaction regime. However, complex atom-based device fabrication requirements have meant emulating a tunable two-dimensional Fermi-Hubbard Hamiltonian in silicon has not been achieved. Here, we fabricate 3 × 3 arrays of single/few-dopant quantum dots with finite disorder and demonstrate tuning of the electron ensemble using gates and probe the many-body states using quantum transport measurements. By controlling the lattice constants, we tune the hopping amplitude and long-range interactions and observe the finite-size analogue of a transition from metallic to Mott insulating behavior. We simulate thermally activated hopping and Hubbard band formation using increased temperatures. As atomically precise fabrication continues to improve, these results enable a new class of engineered artificial lattices to simulate interactive fermionic models.

Citations

• Quantum Spin Liquids

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Discussions

• ⚛️ 🧪 Here’s an example of the cool physics that has been explored with APAM: engineering electronic properties through atomic scale patterning of 2D systems doi.org/10.1038/s414... #semiconductor [bsky, 3 points, 0 comments]

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