2025/10/16 by E. B. Schneider, O. G. Lloyd-Willard, Schneider, Ella B +17 · 1 voice
Biochemistry, Genetics and Molecular Biology · Engineering · Materials Science · #Advanced Electron Microscopy Techniques and Applications #Electron and X-Ray Spectroscopy Techniques #Silicon and Solar Cell Technologies
paper · pdf · doi:10.1021/acs.nanolett.5c05280
openalex created_date 2026/01/10 · openalex publication_date 2026/01/10 · openalex updated_date 2026/06/15
High Resolution Image Download MS PowerPoint Slide Deterministic placement of single dopants is essential for scalable quantum devices based on Group V donors in silicon. We demonstrate a nondestructive, high-efficiency method for detecting individual ion implantation events using secondary electrons (SEs) in a focused-ion-beam system. Using low-energy Sb ions implanted into undoped silicon, we achieve up to 98 ± 1% single-ion detection efficiency (DE). We find that introducing thin, controlled SiO 2 capping layers enhances the SE yield, consistent with the increased electron mean-free path in the oxide, while maintaining successful ion deposition in the underlying silicon substrate. Our approach provides a robust and scalable route to precise donor placement and extends deterministic implantation strategies to a broad range of material systems and quantum device architectures.