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A 1- μ W Radiation-Hard Front-End in a 0.18- μ m CMOS Process for the MALTA2 Monolithic Sensor

2022/04/27 by F. Piro, P. Allport, P. P. Allport +40 · 1 citation
Engineering · Physics and Astronomy · #CCD and CMOS Imaging Sensors #Particle Detector Development and Performance #Radiation Detection and Scintillator Technologies

paper · pdf · doi:10.1109/tns.2022.3170729

openalex publication_date 2022/04/27 · crossref created 2022/04/27 · openalex created_date 2022/05/05 · crossref issued 2022/06/01 · crossref published 2022/06/01 · crossref published-print 2022/06/01 · crossref deposited 2024/01/22 · crossref indexed 2026/07/29 · openalex updated_date 2026/08/01

Abstract

In this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to achieve high detection efficiencies, is presented. The sensor features a small collection electrode to achieve a small capacitance (151-MeV\text n_\text eq/\text cm^2non-ionizing energy loss (NIEL) and 80 Mrad total ionizing dose (TID) required for this application. Tests up to3 ⋅ 10151-MeV\text n_\text eq/\text cm^2and 100 Mrad were performed on the MALTA2 sensor and front-end circuit, which still show good performance even after these levels of irradiation, promising for even more demanding applications such as the future experiments at the high-luminosity large hadron collider (HL-LHC).

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