2012/03/13 by Xingji Li, Chaoming Liu, Hongbin Geng +3 · 1 citation
Engineering · #Advancements in Semiconductor Devices and Circuit Design #Radiation Effects in Electronics #Semiconductor materials and devices
paper · doi:10.1109/tns.2012.2183615
openalex publication_date 2012/03/13 · crossref created 2012/03/13 · crossref issued 2012/04/01 · crossref published 2012/04/01 · crossref published-print 2012/04/01 · crossref deposited 2021/10/10 · openalex created_date 2025/10/10 · crossref indexed 2026/07/30 · openalex updated_date 2026/07/30
This paper examines individual radiation effects caused by 110 KeV electrons, 70 KeV electrons and 170 KeV protons, and combined radiation effects induced by 110 KeV electrons together with 170 KeV protons and 70 KeV electrons with 170 KeV protons on the forward current gain of bipolar junction transistors (3CG130, PNP). The combined radiation effects include simultaneous and sequential radiation effects. Key parameters were measured in-situ and the change in current gain of the PNP transistors is obtained at a fixed voltage of emitter-base junction . Experimental results show that the current gain degradation of the PNP transistors is sensitive to both of ionization and displacement damage. The ionization damage is primarily caused by 110 KeV and 70 KeV electrons, while the displacement damage is mainly induced by 170 KeV protons in this investigation. Based on the simultaneous and sequential exposure results, the ionization damage caused by 110 KeV and 70 KeV electrons could give annealing-like and enhancing effects to displacement damage induced by 170 KeV protons for PNP BJTs.