Graphene Growth and Device Integration

2013/05/24 by Luigi Colombo, Robert M. Wallace, Rodney S. Ruoff · 3 citations
Materials Science · Engineering · #Graphene research and applications #Advancements in Battery Materials #2D Materials and Applications

paper · doi:10.1109/jproc.2013.2260114

Abstract

Graphene has been introduced to the electronics community as a potentially useful material for scaling electronic devices to meet low-power and high-performance targets set by the semiconductor industry international roadmap, radio-frequency (RF) devices, and many more applications. Growth and integration of graphene for any device is challenging and will require significant effort and innovation to address the many issues associated with integrating the monolayer, chemically inert surface with metals and dielectrics. In this paper, we review the growth and integration of graphene for simple field-effect transistors and present physical and electrical data on the integrated graphene with metals and dielectrics.

Citations

• The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

Cited by

• Going ballistic: Graphene hot electron transistors
• Reversible defect engineering in graphene grain boundaries. [europepmc]
• Magnetic Sensing Properties of PVD Carbon Films Containing Vertically Aligned Crystallites. [europepmc]

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