1999/11/23 by Niels Asger Mortensen, Antti-Pekka Jauho, Karsten Flensberg
Physics and Astronomy · #cond-mat.mes-hall #cond-mat.supr-con
published as Extended abstracts of Electron Transport in Mesoscopic Systems, pp. 120-121 (1999) · 2 pages including 3 figures. Extended abstract for "Electron Transport in Mesoscopic Systems", 12-15 August 1999, Gotenburg, Sweden (LT22 satelite)
arxiv created 1999/11/23 · arxiv updated 2009/11/30
An inherent difficulty in studying mesoscopic effects in semiconductor--superconductor hybrid structures is the large Schottky barrier which often forms at the interface. A large technological effort has been invested in in improving the contact between the superconductor and the two-dimensional electron gas (2DEG) of a semiconductor heterostructure, and in recent years this has become possible for e.g. GaAs-Al, GaAs-In, and InAs-Nb junctions. This development motivates quantitative theoretical modeling of sample-specific transport properties. The aim of our work is to model the conducting properties of a ballistic 2DEG-S interfaces with a QPC in the normal region and also to take into account scattering due to a weak Schottky barrier and/or non-matching Fermi properties of the semiconductor and superconductor.