1999/11/11 by G. Tóth, Geza Toth, Alexei O. Orlov +4
Computer Science · Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Quantum-Dot Cellular Automata #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.60.16906
published as Phys. Rev. B, vol. 60, number 24, 16906-16912 (15 Dec 1999-II) · 19 pages [pre-print style], 8 figures, accepted for Phys. Rev. B
arxiv created 1999/11/11 · openalex publication_date 1999/12/15 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The electrostatic interaction between two capacitively coupled metal double-dots is studied at low temperatures. Experiments show that when the Coulomb blockade is lifted by applying appropriate gate biases to both double-dots, the conductance through each double-dot becomes significantly lower than when only one double-dot is conducting. A master equation is derived for the system and the results obtained agree well with the experimental data. The model suggests that the conductance lowering in each double-dot is caused by a single-electron tunneling in the other double-dot. Here, each double-dot responds to the instantaneous, rather than average, potentials on the other double-dot. This leads to correlated electron motion within the system, where the position of a single electron in one double-dot controls the tunneling rate through the other double-dot.