1998/12/04 by D. Y. Oberli, M.‐A. Dupertuis, M. -A. Dupertuis +2 · 2 citations
Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Strong Light-Matter Interactions #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.59.2910
published as Phys. Rev. B 59, 2910 (1999) · 10 pages, 5 figures to be published in Phys. Rev. B (15 january 1999)
arxiv created 1998/12/04 · openalex publication_date 1999/01/15 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have studied the effect of disorder on the radiative properties of semiconductor quantum wires by time-resolved photoluminescence spectroscopy. The dependence of the radiative lifetimes is measured over a temperature range extending from 8 to 150 K. At low temperatures we find that the measured dependence does not conform to the theoretical prediction for recombination of free excitons in a quasi-one-dimensional system due to the major influence of disorder. An extension of the theory is developed in order to take into account exciton ionization and the contribution of free carriers. A mean localization length for excitons is also estimated from the radiative lifetime at 8 K.