1994/10/13 by H. -O. Müller, A. Hädicke, W. Krech
Physics and Astronomy · #cond-mat
published as phys.stat.sol. b 188(2), 667-77 (1995) · 11 pages + 8 figures, REVTeX 3.0, JE-FKS-94-5 8 pages of Postscript figures appended, The numbering of the figures is 1, 2, 3, 4, 5a, 5b, 5c and 6
arxiv created 1994/10/13 · arxiv updated 2009/11/30
The temperature dependence of the I-V characteristics of many single-electron tunneling devices enable thermometer operation of these systems. We investigate two normal conducting kinds of them, \sl (a) a single junction in a high-impedance environment, and \sl (b) a double junction. The characteristics of both devices show a crossover from Coulomb blockade at low temperatures to ohmic behavior at high temperatures. The related differential conductivity dip allows the determination of the junctions temperature. Both configurations \sl (a) and \sl (b) are expected to work at least within the range 0.5≤βE\rm C≤ 10, where E\rm C is the Coulomb energy of the system under investigation. We present an analytical solution for both low- and high-temperature case of \sl (a) and \sl (b) as well as numerical results and their fit, including the effect of co-tunneling in case of a double junction.