2003/12/17 by M. Shayegan, K. Karrai, Y. P. Shkolnikov +3 · 11 citations
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1063/1.1635963
published as Applied Physics Letters, Vol. 83, No. 25, pp. 5235-5237, 22 December 2003 · 2 figures
openalex publication_date 2003/12/17 · arxiv created 2004/11/30 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We demonstrate the use of a piezoelectric actuator to apply, at low temperatures, uniaxial stress in the plane of a two-dimensional electron system confined to a modulation-doped AlAs quantum well. Via the application of stress, which can be tuned in situ and continuously, we control the energies and occupations of the conduction-band minima and the electronic properties of the electron system. We also report measurements of the longitudinal and transverse strain versus bias for the actuator at 300, 77, and 4.2 K. A pronounced hysteresis is observed at 300 and 77 K, while at 4.2 K, strain is nearly linear and shows very little hysteresis with the applied bias.