2004/09/30 by Takeo Hoshi, Yusuke Iguchi, Takeo Fujiwara · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.72.075323
published as Phys. Rev. B 72, 075323 (2005) · 11 pages, 10 figures. A (heavier) PDF file with a better graphics is available at http://fujimac.t.u-tokyo.ac.jp/hoshi/
arxiv created 2005/03/16 · openalex publication_date 2005/08/09 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The 10\text\ensuremath-nm-scale structure formed in silicon cleavage is studied by the quantum mechanical calculations of large-scale electronic structure. The cleavage process was simulated and the results show not only the elementary process of the (experimentally observed) (111)-(2\ifmmode×\else\texttimes\fi1) surface reconstruction but also several step-formation processes. These processes are studied by analyzing electronic freedom and compared with scanning tunneling microscopy experiments. The stability mechanism of the (111)-(2\ifmmode×\else\texttimes\fi1) cleavage mode is presented beyond the traditional approach with surface energy. In other results, the cleavage path was bent into the experimentally observed planes, owing to the relative stability among cleavage modes. Several common aspects between cleavage and other phenomena are discussed from the viewpoints of nonequilibrium process and 10\text\ensuremath-nm-scale structure.