Control of electron-spin coherence using Landau level quantization in a two-dimensional electron gas

2004/07/26 by V. Sih, Vanessa Sih, W. H. Lau +7 · 1 citation
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.70.161313

published as Phys. Rev. B 70, 161313(R) (2004) · 5 pages, 4 figures

arxiv created 2004/07/26 · openalex publication_date 2004/10/28 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Time-resolved optical measurements of electron-spin dynamics in modulation-doped InGaAs quantum wells are used to explore electron spin coherence times and spin precession frequencies in a regime where an out-of-plane magnetic field quantizes the states of a two-dimensional electron gas into Landau levels. Oscillatory features in the transverse spin coherence time and effective g factor as a function of the applied magnetic field exhibit a correspondence with Shubnikov--de Haas oscillations, illustrating a coupling between spin and orbital eigenstates. We present a theoretical model in which inhomogeneous dephasing due to the population of different Landau levels limits the spin coherence time and captures the essential experimental results.

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• Frequency dependence of induced spin polarization and spin current in quantum wells

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