2004/05/25 by Jun-Qiang Lu, Jian Wu, Wenhui Duan +2
Physics and Astronomy · #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.1923160
published as J. Appl. Phys. 97, 114314 (2005) · 4 pages, 4 figures
arxiv created 2004/05/25 · arxiv updated 2009/12/01
Two mechanisms that drive metal-to-semiconductor transitions in single-walled carbon nanotubes are theoretically analyzed through a simple tight-binding model. By considering simple structural trends, the results demonstrate that metal-to-semiconductor transitions can be induced more readily in metallic zigzag nanotubes than in armchair nanotubes. Furthermore, it is shown that both mechanisms have the effect of making the two originally equivalent sublattices physically distinguishable.