Shot noise in resonant tunneling through a zero-dimensional state with a complex energy spectrum

2004/02/13 by A. Nauen, F. Hohls, J. Könemann +2 · 1 citation
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.69.113316

published as Phys. Rev. B 69, 113316 (2004) · 4 pages, 4 figures, accepted for Phys. Rev. B

arxiv created 2004/02/13 · openalex publication_date 2004/03/30 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We investigate the noise properties of a GaAs/Al_xGa_1\ensuremath-xAs resonant-tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of a coupled two-state system. For large bias voltages we observe super-Poissonian shot noise up to values of the Fano factor \ensuremathα\ensuremath≈10.

Citations

• Shot Noise in Mesoscopic Conductors

Cited by

• Positive cross-correlations due to dynamical channel blockade in a three-terminal quantum dot

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