2003/11/30 by Michio Watanabe, Yasunobu Nakamura, Jaw-Shen Tsai · 1 citation
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Superconducting and THz Device Technology #Surface and Thin Film Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.1640798
published as Appl. Phys. Lett. 84, 410 (2004) · Published version, RevTeX4
openalex publication_date 2004/01/13 · arxiv created 2004/01/16 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al–)Al2O3/Nb trilayer, we have fabricated a Nb single-electron transistor (SET), and characterized the SET at low temperatures, T=0.04–40 K. The superconducting gap energy and the transition temperature of the Nb SET agree with the bulk values, which suggests high quality Nb junctions. The single-electron charging energy of the SET is estimated to be larger than 1 K.