2003/11/06 by Duc Phuong Nguyen, Nicolas Regnault, Robson Ferreira +1
Physics and Astronomy · #cond-mat
published as Solid State Communications 130 (2004) 751 · submitted to Applied Physics Letter
arxiv created 2003/11/06 · arxiv updated 2009/12/01
We show that the large band offsets between GaN and InN and the heavy carrier effective masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga_(1-x)In_(x)N/GaN heterostructures while this approximation works very well for the Ga_(1-x)In_(x)As/GaAs heterostructures.