Probing hole-induced ferromagnetic exchange in magnetic semiconductors by inelastic neutron scattering

2003/06/07 by H. Kepa, Le Van Khoi, C. M. Brown +4
Physics and Astronomy · #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.91.087205

published as Phys. Rev. Lett. 91 (2003) 087205 · 4 pages, 2 figures, submitted to PRL

arxiv created 2003/06/07 · arxiv updated 2009/11/30

Abstract

The effect of hole doping on the exchange coupling of the nearest neighbor (NN) Mn pairs in Zn_1-xMn_xTe is probed by inelastic neutron scattering. The difference in the NN exchange energy ΔJ₁ in the presence and in the absence of the holes is determined. The obtained value of ΔJ₁ is in good agreement with the predictions of the Zener/RKKY model, even on the insulator side of the metal-insulator transition.

Related

• Propagation of defects in doped magnetic materials of different dimensionality
• Exchange interactions in (ZnMn)Se
• Magnetic Semiconductors are Frustrated Ferromagnets
• A new mechanism of exchange interaction in ferromagnetic semiconductors
• Electronic states and cyclotron resonance inn-type InMnAs