2003/04/25 by Vidar Gudmundsson, Viðar Guðmundsson, Chi-Shung Tang +2 · 1 citation
Engineering · Physics and Astronomy · #Semiconductor Quantum Structures and Devices #Semiconductor materials and interfaces #Terahertz technology and applications #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.68.165343
published as Phys. Rev. B 68, 165343 (2003) · LaTeX,10 pages with 11 embedded postscript figures
arxiv created 2003/04/25 · openalex publication_date 2003/10/28 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present a grid-free density functional theory model appropriate to explore the time evolution of electronic states in a semiconductor nanostructure. The model can be used to investigate both the linear and nonlinear responses of the system to an external short-time perturbation in the THz regime. We use the model to study the effects of impurities on the magnetospectroscopy of a two-dimensional electron gas in a nanostructure excited by an intense THz radiation. We do observe a reduction in the binding energy of the impurity with increasing excitation strength, and at a finite magnetic field we find a slow onset of collective spin oscillations that can be made to vanish with a stronger excitation.