2002/10/31 by C. S. Tang, Chi‐Shung Tang, Y. H. Tan +2 · 1 citation
Engineering · Physics and Astronomy · #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.67.205324
published as Phys. Rev. B 67, 205324 (2003) · 8 pages, 5 figures
openalex publication_date 2003/05/30 · arxiv created 2005/07/27 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have investigated the time-modulated coherent quantum transport phenomenon in a ballistic open quantum dot. Conductance G and the electron dwell time in the dots are calculated by a time-dependent mode-matching method. Under high-frequency modulation, the traversing electrons are found to exhibit three types of resonant scatterings. They are intersideband scatterings into quasibound states in the dots, into true bound states in the dots, and into quasibound states just beneath the subband threshold in the leads. Dip structures or fano structures in G are their signatures. Our results show structures due to 2\ensuremath\Elzxh\ensuremathω intersideband processes. At the above scattering resonances, we have estimated, according to our dwell time calculation, the number of round-trip scatterings which the traversing electrons undertake between the two dot openings.