2000/06/30 by Y. Mizuno, K. Tsutsui, T. Tohyama +1 · 1 citation
Physics and Astronomy · #cond-mat.str-el #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.62.r4769
published as Phys. Rev. B 62, R4769-R4773 (2000) · 5 pages with 3 figures, to appear in PRB RC, 15 August 2000
arxiv created 2000/07/08 · arxiv updated 2009/11/30
We theoretically study the nonlinear optical response and photoexcited states of the Mott insulators. The nonlinear optical susceptibility χ^(3) is calculated by using the exact diagonalization technique on small clusters. From the systematic study of the dependence of χ^(3) on dimensionality, we find that the spin-charge separation plays a crucial role in enhancing χ^(3) in the one-dimensional (1D) Mott insulators. Based on this result, we propose a holon-doublon model, which describes the nonlinear response in the 1D Mott insulators. These findings show that the spin-charge separation will become a key concept of optoelectronic devices.