2016/07/21 by R. J. H. Morris, T. P. A. Hase, A. M. Sanchez +2
Engineering · #Advancements in Semiconductor Devices and Circuit Design #Integrated Circuits and Semiconductor Failure Analysis #Semiconductor materials and devices
paper · doi:10.1007/s13361-016-1439-4
openalex publication_date 2016/07/21 · openalex created_date 2016/08/23 · openalex updated_date 2026/07/29
The utility of energy sequencing for extracting an accurate matrix level interface profile using ultra-low energy SIMS (uleSIMS) is reported. Normally incident O2 (+) over an energy range of 0.25-2.5 keV were used to probe the interface between Si0.73Ge0.27/Si, which was also studied using high angle annular dark field scanning transmission electron microscopy (HAADF-STEM). All the SIMS profiles were linearized by taking the well understood matrix effects on ion yield and erosion rate into account. A method based on simultaneous fitting of the SIMS profiles measured at different energies is presented, which allows the intrinsic sample profile to be determined to sub-nanometer precision. Excellent agreement was found between the directly imaged HAADF-STEM interface and that derived from SIMS. Graphical Abstract ᅟ.