2013/07/30 by Qi Wang, Q Wang, A T Connie +13
Physics and Astronomy · Materials Science · #GaN-based semiconductor devices and materials #ZnO doping and properties #Ga2O3 and related materials
paper · doi:10.1088/0957-4484/24/34/345201
High crystal quality, vertically aligned AlxGa1-xN nanowire based double heterojunction light emitting diodes (LEDs) are grown on Si substrate by molecular beam epitaxy. Such AlxGa1-xN nanowires exhibit unique core-shell structures, which can significantly suppress surface nonradiative recombination. We successfully demonstrate highly efficient AlxGa1-xN nanowire array based LEDs operating at ∼340 nm. Such nanowire devices exhibit superior electrical and optical performance, including an internal quantum efficiency of ∼59% at room temperature, a relatively small series resistance, highly stable emission characteristics, and the absence of efficiency droop under pulsed biasing conditions.