2022/09/14 by Po-Cheng Tsai, Po‐Cheng Tsai, Coung-Ru Yan +3
Engineering · Materials Science · #2D Materials and Applications #Graphene research and applications #Perovskite Materials and Applications
paper · doi:10.1088/1361-6528/ac91d6
openalex publication_date 2022/09/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29
Abstract Bottom-gate transistors with mono-layer MoS 2 channels and polycrystalline antimonene source/drain contact electrodes deposited at 75 °C are fabricated. Significant performance enhancement of field-effect mobility 11.80 cm 2 V −1 ·s −1 and >10 6 ON/OFF ratio are observed for the device. Increasing photocurrents are also observed for the MoS 2 transistor under light irradiation, which is attributed to the reduced carrier recombination at the metal/2D material interfaces. The results have demonstrated that besides the matching of work function values with the 2D material channel, the crystallinity of the contact electrodes is the other important parameter for the Ohmic contact formation of 2D material devices.