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Size-dependent oriented attachment in the growth of pure and defect-free hexagonal boron nitride nanocrystals

2011/03/30 by L X Lin, Liangxu Lin, Z H Li +5
Materials Science · #Graphene research and applications #Boron and Carbon Nanomaterials Research #Diamond and Carbon-based Materials Research

paper · doi:10.1088/0957-4484/22/21/215603

Abstract

Pure and defect-free hexagonal boron nitride (hBN) nanocrystals with deep-ultraviolet light emissions at around 215 nm were prepared via a solid state reaction. This involved preparing a precursor from potassium borohydride and ammonium chloride powders, and then heating the precursor and additional ammonium chloride to 1000 °C within a nitrogen atmosphere. The hBN nanocrystals were studied using a variety of characterization techniques (e.g., TEM, AFM, N(2) absorption/desorption). A growth mechanism based on size-dependent oriented attachment was proposed for the nanocrystals.

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