Ab-initio study of anisotropic and chemical surface modifications of β-SiC nanowires

2012/10/19 by Alejandro Trejo, J.L. Cuevas, José Luis Cuevas +5 · 1 citation
Engineering · Materials Science · #Ga2O3 and related materials #Semiconductor materials and devices #Silicon Carbide Semiconductor Technologies

paper · doi:10.1007/s00894-012-1605-y

openalex publication_date 2012/10/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Citations

• Relaxation of Crystals with the Quasi-Newton Method

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