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Wet etching of GaN, AlN, and SiC: a review
2005/01/01 by
D. Zhuang
,
J.H. Edgar
· 2 citations
paper
· doi:10.1016/j.mser.2004.11.002
Cited by
Investigation of Phase Segregation in Highly Doped InP by Selective Electrochemical Etching
Neural Network-Driven Molecular Insights into Alkaline Wet Etching of GaN: Toward Atomistic Precision in Nanostructure Fabrication