2024/04/25 by Mahammad Tahir, Subhakanta Das, Tahir, Mahammad +7
Computer Science · Engineering · Materials Science · #Advanced Memory and Neural Computing #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum-Dot Cellular Automata
paper · pdf · doi:10.48550/arxiv.2404.16595
openalex publication_date 2024/04/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The use of graphene in spintronic devices is contingent on its ability to convert a spin current into a charge current. We have systematically investigated the spin pumping induced spin-to-charge current conversion at the Graphene/FM interface and the effect of interface modification through high spin orbit coupling (SOC) material (Pt) as an interlayer (IL) of varying thicknesses by using broadband FMR spectroscopy. The spin mixing conductance is enhanced from 1.66 × 1018 m-2 to 2.72 × 1018 m-2 whereas the spin current density is enhanced from 0.135± 0.003 to 0.242±0.004 MA/m2 at the Graphene/FM interface due to the interface modification using high SOC material Pt as an interlayer. The spin current to charge current conversion efficiency turns out to be ≈ 0.003 nm for the Graphene/FM interface. These findings support the idea that Graphene in combination with high SOC material (Pt) could be a potential candidate for spintronic applications, specifically for spin-torque-based memory applications.