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Optical, vibrational, and electronic properties of semiconducting YbN

2026/07/24 by Martin Markwitz, M. Markwitz, C. Pot +5
Chemistry · Engineering · Materials Science · #Boron and Carbon Nanomaterials Research #Inorganic Chemistry and Materials #Metal and Thin Film Mechanics

paper · pdf · doi:10.1016/j.physb.2026.419093

openalex publication_date 2026/07/24 · openalex created_date 2026/07/25 · openalex updated_date 2026/07/28

Abstract

We investigate the vibrational, optical, and electronic properties of semiconducting YbN thin films using Raman spectroscopy, Fourier-transform infrared spectroscopy, and electrical transport measurements, supported by density functional theory calculations. Raman spectra reveal the LO( Γ ) phonon and a cation-vacancy mode, while the optical conductivity identifies the TO phonon and an absorption edge corresponding to a 1.7 eV N 2 p → Yb 5 d transition. The films exhibit thermally activated resistivity consistent with an insulating ground state. An additional defect-induced absorption tail below the intrinsic band gap is observed, which in combination with the electrical measurements indicates the Fermi energy resides in defect states within the band gap near the conduction band minimum.

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