Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

2019/12/31 by Arnout Beckers, Farzan Jazaeri, Christian Enz · 7 citations
Engineering · #Advancements in Semiconductor Devices and Circuit Design #Semiconductor materials and devices #Silicon Carbide Semiconductor Technologies

paper · pdf · doi:10.1109/led.2019.2963379

Abstract

This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is independent of temperature and proportional to the characteristic decay of a band tail. The proposed expression tends to the Boltzmann limit when the decay of the band tail tends to zero. Since the saturation is universally observed in different types of MOSFETs (regardless of dimension or semiconductor material), this suggests that an intrinsic mechanism is responsible for the band tail.

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