Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type SnO Heterojunction

2021/12/01 by Xunxun Wang, Shiqi Yan, Wenxiang Mu +5
Materials Science · #Ga2O3 and related materials #ZnO doping and properties #Electronic and Structural Properties of Oxides

paper · doi:10.1109/led.2021.3132192

Abstract

Mechanically exfoliated gallium oxide (Ga2O3) nano sheets based filed-effect-transistors (FETs) with Al2O3/Ga2O3, indium gallium zinc oxide (IGZO)/Ga2O3n-n, and SnO/Ga2O3p-n heterojunctions in the back-channel were fabricated. In contrast to that Al2O3/Ga2O3heterojunction induces negative threshold voltage (V _\text TH) shift, both IGZO/Ga2O3n-n and SnO/Ga2O3p-n heterojunctions shiftV _\text THpositively. The Ga2O3FET with 12 nm p-type SnO realizes enhanced-mode operation withV _\text THof 5.3 V by significantly shiftingV _\text THof 40.3 V, high on current density of 14.1mA/mm, and high electron mobility of 191 cm2V−1s−1, which is, to the best of our knowledge, the highest among the reported Ga2O3FETs measured at room temperature.

Citations

• Normally-Off Ga2O3MOSFETs With Unintentionally Nitrogen-Doped Channel Layer Grown by Plasma-Assisted Molecular Beam Epitaxy

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