1.85 kV Breakdown Voltage in Lateral Field-Plated Ga 2 O 3 MOSFETs

2018/09/01 by Ke Zeng, Abhishek Vaidya, Uttam Singisetti · 1 citation

paper · doi:10.1109/led.2018.2859049

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• 2.34 kV \beta-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width