Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

2007/08/01 by Woo Young Choi, Byung-Gook Park, Byung‐Gook Park +3 · 2 citations
Engineering · #Advancements in Semiconductor Devices and Circuit Design #Nanowire Synthesis and Applications #Semiconductor materials and devices

paper · doi:10.1109/led.2007.901273

openalex publication_date 2007/08/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04

Abstract

We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has a subthreshold swing (SS) of 52.8 mV/dec at room temperature. It is the first experimental result that shows a sub-60-mV/dec SS in the silicon-based TFETs. Based on simulation results, the gate oxide and silicon-on-insulator layer thicknesses were scaled down to 2 and 70 nm, respectively. However, theon/offcurrent ratio of the TFET was still lower than that of the MOSFET. In order to increase theoncurrent further, the following approaches can be considered: reduction of effective gate oxide thickness, increase in the steepness of the gradient of the source to channel doping profile, and utilization of a lower bandgap channel material.

Cited by

• Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance
• Insight into Potential Well Based Nanoscale FDSOI MOSFET Using Doped Silicon Tubs- A Simulation and Device Physics Based Study: Part I: Theory and Methodology