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Low-Temperature Electrical and Thermal Resistivities of Tungsten

1971/05/15 by D. K. Wagner, David K. Wagner, J. C. Garland +1 · 1 citation
Physics and Astronomy · Materials Science · Engineering · #Surface and Thin Film Phenomena #Copper Interconnects and Reliability #Semiconductor materials and devices

paper · doi:10.1103/physrevb.3.3141

Abstract

Measurements of \ensuremathρ and WT (\ensuremathρ is the electrical resistivity and W is the thermal resistivity) of high-purity single-crystal specimens of tungsten have been performed in the temperature range 1.5-6.0 K. The temperature dependence of \ensuremathρ and WT was found to be predominantly quadratic, in agreement with observations in other transition metals. We attribute this behavior to electron-electron scattering between different branches of the Fermi surface. The validity of Matthiessen's rule for impurity and boundary scattering was investigated to determine whether the contributions of electron-electron scattering \ensuremathρe and WeT could be meaningfully separated from the total resistivities \ensuremathρ and WT. In those samples in which boundary scattering contributed least to the total resistivities, Matthiessen's rule was found to be reasonably well obeyed for the electrical resistivity, while deviations were observed for the thermal resistivity. The Lorenz number for electron-electron scattering, Le=\frac\ensuremathρeWeT, for these samples was found to range from 0.2\ifmmode×\else\texttimes\fi10^\ensuremath-8 to 0.4\ifmmode×\else\texttimes\fi10^\ensuremath-8 W\ensuremathΩ/K2.

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