Quantum Interference Properties of Double Josephson Junctions

1972/08/01 by T. A. Fulton, L. N. Dunkleberger, R. C. Dynes · 4 citations
Physics and Astronomy · #Quantum and electron transport phenomena #Physics of Superconductivity and Magnetism #Semiconductor Quantum Structures and Devices

paper · doi:10.1103/physrevb.6.855

Abstract

The dependence of the critical current I_c on magnetic field B in double Josephson tunnel junctions is discussed in a model which includes the dependence of junction critical currents, magnetic self-screening, and asymmetry. Account is taken both of static (zero-voltage) and dynamic (nonzero-voltage) behavior, the former controlling the over-all shape of I_c(B) and the latter being important in nonadiabatic transitions between multiple states of the junction. The experimental I_c(B) of double Sn-Sn tunnel junctions are interpreted in this model, and display effects of both static and dynamic origin.

Citations

• Supercurrents through barriers

Cited by

• Proposals for realizing a Josephson diode in Atomtronic circuits
• Bloch diode
• KTaO3-based editable superconducting diode
• dc SQUID: Noise and optimization

Related

• Spin-Josephson effect in antiferromagnetic tunnel junctions
• A New Approach to the Josephson Effect
• Quantum Effects in Small-Capacitance Single Josephson Junctions
• Interplay between ferromagnetism and superconductivity in tunneling currents
• Flux-tunable barrier in proximity Josephson junctions