2025/09/17 by Hao Li, Li, Hao, Zhongxia Shang +7
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #Semiconductor materials and interfaces #Superconductivity (cond-mat.supr-con) #Surface and Thin Film Phenomena
paper · pdf · doi:10.48550/arxiv.2509.14173
openalex publication_date 2025/09/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Facilitated by recent advances in strained Ge/SiGe quantum well (QW) growth technology, superconductor-semiconductor hybrid devices based on group IV materials have been developed, potentially augmenting the functionality of quantum circuits. The formation of highly transparent superconducting platinum germanosilicide (PtSiGe) contacts to Ge/SiGe heterostructures by solid-phase epitaxy between Pt and SiGe has recently been reported, although with a relatively low critical temperature <1 K. Here, we present a comparative study of the superconducting properties of Pt, Pd, Rh, and Ir germanides, along with an in-depth characterization of Ir(Si)Ge films formed by solid-phase epitaxy. For films fabricated under optimal epitaxy conditions, we report Tc=3.4 K (2.6 K for IrGe (IrSiGe). High-resolution scanning transmission electron microscopy (HRSTEM) and energy-dispersive X-ray spectroscopy (EDX) reveal that Ir reacts with Ge substrates to form a polycrystalline IrGe layer with a sharp IrGe/Ge interface.