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Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films

2022/02/16 by Jiayuan Hu, Hu, Jiayuan, Wenxiang Jiang +19
Physics and Astronomy · #FOS: Physical sciences #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Strongly Correlated Electrons (cond-mat.str-el) #Superconductivity (cond-mat.supr-con) #Topological Materials and Phenomena

paper · pdf · doi:10.48550/arxiv.2202.08110

openalex publication_date 2022/02/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Sr-doped Bi2Se3 thin films was known as a potential candidate of topological superconductor. The magnetoresistance (MR) of SrxBi2Se3 films with various doping concentrations x were found to be dominated by weak antilocalization (WAL) at low magnetic fields, whereas the classical MR, which originally dominated the MR, was almost completely suppressed. In contrast, the MR of all samples has been observed to be dominated by linear magnetoresistance (LMR) at high magnetic fields. The LMR, having the linear dependence on carrier mobility, can be successfully explained by the Parish-Littlewood model. This indicates that LMR originates from mobility fluctuation induced by Sr dopant atoms in doped Bi2Se3 films.

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