X-ray Irradiation Studies on the Monopix DMAPS in 150 nm and 180 nm

2025/06/05 by C. Bespin, M. Barbero, Bespin, Christian +39
Engineering · Physics and Astronomy · #CCD and CMOS Imaging Sensors #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Particle Detector Development and Performance #Radiation Effects in Electronics

paper · pdf · doi:10.48550/arxiv.2506.04776

openalex publication_date 2025/06/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30

Abstract

Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies facilitate depletion of the charge sensitive volume. TJ-Monopix2 and LF-Monopix2 are the most recent large-scale chips in their respective development line, aiming for the ATLAS Inner Tracker outer layer requirements. Those include a tolerance to ionizing radiation of up to 100 Mrad. It was evaluated by irradiating both devices with X-rays to the corresponding ionization dose, showing no significant degradation of the performance at 100 Mrad and continuous operability throughout the irradiation campaign.

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