2011/06/03 by Pham Nam Hai, Hai, Pham Nam, Lê Đức Anh +4 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Gas Sensing Nanomaterials and Sensors #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #ZnO doping and properties #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1106.0561
openalex publication_date 2011/06/03 · arxiv created 2011/10/04 · arxiv updated 2011/10/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Carrier-induced ferromagnetic semiconductors (FMSs) have been intensively studied for decades as they have novel functionalities that cannot be achieved with conventional metallic materials. These include the ability to control magnetism by electrical gating or light irradiation, while fully inheriting the advantages of semiconductor materials such as band engineering. Prototype FMSs such as (In,Mn)As or (Ga,Mn)As, however, are always p-type, making it difficult to be used in real spin devices. This is because manganese (Mn) atoms in those materials work as local magnetic moments and acceptors that provide holes for carrier-mediated ferromagnetism. Here we show that by introducing iron (Fe) into InAs, it is possible to fabricate a new FMS with the ability to control ferromagnetism by both Fe and independent carrier doping. Despite the general belief that the tetrahedral Fe-As bonding is antiferromagnetic, we demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS, a missing piece of semiconductor spintronics for decades. This achievement opens the way to realise novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.