2001/07/16 by Darsikin Darsikin, D. M. Jasruddin, Darsikin +14
Engineering · Physics and Astronomy · #Condensed Matter (cond-mat) #FOS: Physical sciences #Silicon Carbide Semiconductor Technologies #Silicon and Solar Cell Technologies #Thin-Film Transistor Technologies #cond-mat
paper · pdf · doi:10.48550/arxiv.cond-mat/0107330
3 pages, 2 figures, 1 table
arxiv created 2001/07/16 · openalex publication_date 2001/07/16 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Photoreceptor devices have been fabricated for positive corona with multi-layer structure of glass/ZnO /i-a-SiC:H /i-a-Si:H /p-a-SiC:H /Al type by using dual chamber plasma enhanced chemical vapor deposition (PECVD) system. 10% Silane (SiH4) and diborane (B2H6) gases diluted in hydrogen (H2) and 100% methane (CH4) gas were used as gas source. As the top passivation layer, the i-type a-SiC:H with optical band-gap of 2.93 eV was used. This highest optical band-gap was selected to allow more illumination through the photo-conductive layer. The i-type a-Si:H which has optical band-gap of 1.78 eV was used as the photo-conductive layer. The conductivity of p-type a-SiC:H films was also measured. The p-type a-SiC:H film with the lowest dark conductivity was then used as the bottom blocking layer to prevent charge injection from photo-conductive layer to the conductive electrode. The surface voltage characteristic of the device was also investigated. It decays as a function of time, with the maximum surface voltage applied is 120 volts.