2001/07/13 by Debdeep Jena, Jena, Debdeep, Umesh K. Mishra +1
Engineering · Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0107311
arxiv created 2001/07/13 · openalex publication_date 2001/07/13 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present a theory of deformation potential carrier scattering of two-dimensional electron gases from the strain fields surrounding dislocations. The results are applied to study the transport characteristics in III-V nitride two-dimensional electron gases in Al(Ga)N/GaN quantum wells. A hypothetical charged core has been associated as the \em only scattering potential for analyzing experimental results for transport studies of the nitrides; we critically examine this assumption in light of our results of strain field scattering. By computing the effect of all possible scattering mechanisms we gauge the importance of strain field scattering from dislocations.