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Thin-film transistor electrical performance of hybrid MoS 2 -P3HT\n semiconductor layers

2020/01/20 by Hyunwoo Choi, Choi, Hyunwoo, William S. Wong +2
Engineering · #Thin-Film Transistor Technologies #Nanowire Synthesis and Applications #Organic Electronics and Photovoltaics

paper · pdf · doi:10.48550/arxiv.2001.07304

Abstract

The hole carrier field-effect mobility of hybrid molybdenum disulfide (MoS2)\nnanoparticles suspended in poly(3-hexylthiophene) (P3HT) thin film transistor\n(TFT) was found to be enhanced when it compared to P3HT-only TFTs. The\nimprovement in the hole charge transport was found to be a function of the\nconcentration of MoS2 in P3HT with high MoS2 concentrations resulting in an\nincrease in the on-current of the device. Moreover, Au has a high work function\nof 5.1 eV which is suitable with the HOMO level of P3HT. We find that MoS2 and\nAu have the proper energy level for hole transport and injection.\n

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