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High-efficiency silicon LED with ultra-wideband emission from visible to infrared at room temperature

2025/08/10 by Xiaobo Li, Li, Xiaobo, Jiajing He +5
Materials Science · Engineering · #Silicon Nanostructures and Photoluminescence #Photonic and Optical Devices #Laser Material Processing Techniques

paper · pdf · doi:10.48550/arxiv.2508.07352

Abstract

The primary challenge in silicon photonics is achieving efficient luminescence in the communication band, crucial for its large-scale application. Despite significant efforts, silicon light sources still suffer from low efficiency and limited emission wavelengths. We addressed this by achieving broadband luminescence from 600-1650 nm through femtosecond laser annealing of 220nm standard SOI, resulting in an external quantum efficiency exceeding 0.26% and an output optical power density greater than 20 W/cm2, several orders of magnitude higher than other silicon-based LEDs in performance. The broadband LED has potential applications in optical inspection, gas sensing, optical coherence tomography, optical communication, and more.

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