The electronic transport of top subband and disordered sea in InAs nanowire in presence of a mobile gate

2013/09/10 by А. Zhukov, Christian Volk, Zhukov, A. A. +7
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Strongly Correlated Electrons (cond-mat.str-el) #Surface and Thin Film Phenomena

paper · pdf · doi:10.48550/arxiv.1309.3253

openalex publication_date 2013/09/10 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28

Abstract

We performed measurements at helium temperatures of the electronic transport in an InAs quantum wire (R_wire ∼ 30 kΩ) in the presence of a charged tip of an atomic force microscope serving as a mobile gate. The period and the amplitude of the observed quasiperiodic oscillations are investigated in detail as a function of electron concentration in the linear and non-linear regime. We demonstrate the influence of the tip-to-sample distance on the ability to locally affect the top subband electrons as well as the electrons in the disordered sea. Furthermore, we introduce a new method of detection of the subband occupation in an InAs wire, which allows us to evaluate the number of the electrons in the conductive band of the wire.

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