2021/02/01 by Junhui Huang, Huang, Junhui, Hao Chen +19
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Quantum Physics (quant-ph) #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2102.00791
openalex publication_date 2021/02/01 · openalex created_date 2021/02/15 · openalex updated_date 2026/07/28
A very long lifetime emission with non-single exponential decay characteristic has been reported for single InAs/GaAs quantum dot (QD) samples, in which there exists a long-lived metastable state in the wetting layer (WL) [ACS Photonics 2020,7,3228-3235]. In this article we have proposed a new three-level model to simulate the emission decay curve. In this model, assuming that the excitons in metastable state will diffuse and be trapped by QDs, and then emit fluorescence in QDs, a stretched-like exponential decay formula is derived as I(t)=At^(β-1)e^(-(rt)β), which can well describe the long lifetime decay curve with an analytical expression of average lifetime =1/rΓ(1/β+1), where Γ is the Gamma function. Furthermore, based on the proposed three-level model, an expression of the second-order auto-correlation function g2 (t) which can well fit the measured g2 (t) curve is also obtained.