2024/08/27 by Sanghyeok Park, Park, Sanghyeok, J D Benson +11 · 2 citations
Engineering · Materials Science · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Integrated Circuits and Semiconductor Failure Analysis #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum Physics (quant-ph) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2408.15380
openalex publication_date 2024/08/27 · openalex created_date 2024/09/22 · openalex updated_date 2026/08/02
Latching techniques are widely used to enhance readout of qubits. These methods require precise tuning of multiple tunnel rates, which can be challenging to achieve under realistic experimental conditions, such as when a qubit is coupled to a single reservoir. Here, we present a method for single-shot measurement of a quantum dot qubit with a single reservoir using a latched-readout scheme. Our approach involves pulsing a barrier gate to dynamically control qubit-to-reservoir tunnel rates, a method that is readily applicable to the latched readout of various spin-based qubits. We use this method to enable qubit state latching and to reduce the qubit reset time in measurements of coherent Larmor oscillations of a Si/SiGe quantum dot hybrid qubit.