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Rewriting Flash Memories by Message Passing

2015/02/01 by Eyal En Gad, Gad, Eyal En, Wentao Huang +5
Computer Science · Mathematics · #Advanced Data Storage Technologies #Error Correcting Code Techniques #FOS: Computer and information sciences #Information Theory (cs.IT) #Quantum Computing Algorithms and Architecture #cs.IT #math.IT

paper · pdf · doi:10.48550/arxiv.1502.00189

Submitted to ISIT 2015

arxiv created 2015/02/01 · openalex publication_date 2015/02/01 · arxiv updated 2015/02/03 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

This paper constructs WOM codes that combine rewriting and error correction for mitigating the reliability and the endurance problems in flash memory. We consider a rewriting model that is of practical interest to flash applications where only the second write uses WOM codes. Our WOM code construction is based on binary erasure quantization with LDGM codes, where the rewriting uses message passing and has potential to share the efficient hardware implementations with LDPC codes in practice. We show that the coding scheme achieves the capacity of the rewriting model. Extensive simulations show that the rewriting performance of our scheme compares favorably with that of polar WOM code in the rate region where high rewriting success probability is desired. We further augment our coding schemes with error correction capability. By drawing a connection to the conjugate code pairs studied in the context of quantum error correction, we develop a general framework for constructing error-correction WOM codes. Under this framework, we give an explicit construction of WOM codes whose codewords are contained in BCH codes.

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