2014/09/25 by G. Q. Huang, Huang, G. Q., Zhongwen Xing +2
Materials Science · Physics and Astronomy · #2D Materials and Applications #Boron and Carbon Nanomaterials Research #FOS: Physical sciences #MXene and MAX Phase Materials #Materials Science (cond-mat.mtrl-sci) #Superconductivity (cond-mat.supr-con) #cond-mat.mtrl-sci #cond-mat.supr-con
paper · pdf · doi:10.48550/arxiv.1409.7284
18 pages, 4 figures, 4 tables
arxiv created 2014/09/25 · openalex publication_date 2014/09/25 · arxiv updated 2014/09/26 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Very recently, field-effect transistors based on few-layer phosphorene crystals with thickness down to a few nanometres have been successfully fabricated, triggering interest in this new functional two-dimensional material. In this work, we apply the first-principles calculations to studying the evolution of electronic structures and lattice dynamics with vertical strain for monolayer and bilayer phosphorenes. It is found that, by changing the thickness of phosphorene or the strain applied on it, its band gap width can be well tuned, and there will appear a transition from semiconductor to metal. In particular, the bilayer phosphorene may become a good BCS superconductor by adjusting the interlayer distance, in which the interlayer van der Waals coupling is favorable to the dynamical stability against strain.