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Kinetics of Exciton Self-Trapping Induced Defect Accumulation in Rare-Gas Solids

2009/02/08 by A. N. Ogurtsov, Ogurtsov, A. N., O. N. Bliznjuk +4
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Materials Science (cond-mat.mtrl-sci) #Other Condensed Matter (cond-mat.other) #Phase-change materials and chalcogenides #cond-mat.mtrl-sci #cond-mat.other

paper · pdf · doi:10.48550/arxiv.0902.1297

7 pages, 4 figures

arxiv created 2009/02/08 · openalex publication_date 2009/02/08 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The kinetics of the process of defect accumulation in rare-gas solids as a result of exciton self-trapping was studied using the selective vacuum ultraviolet photoluminescence method for monitoring of the crystal structure of the samples. The simple kinetic model of defect accumulation in rare-gas samples was applied to the fitting of the dose dependences of luminescence from solid Xe and Ne. The characteristic kinetic parameters were obtained by linear transformation of the time dependence of luminescence intensity of "defect" subbands.

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