2014/10/06 by R. Ramaseshan, Ramaseshan, R., Feby Jose +5
Engineering · Materials Science · #Advanced Surface Polishing Techniques #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Metal and Thin Film Mechanics
paper · pdf · doi:10.48550/arxiv.1410.1277
openalex publication_date 2014/10/06 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
A modified electron beam evaporator has been used judiciously to synthesize TiN thin films with (111) preferred orientation. This new design involved in creating local plasma by accelerating the secondary electrons emitted from the evaporating ingot by a positively biased semi-cylindrical anode plate kept in the vicinity and a jet of N2 gas has been focused towards the substrate as a reactive gas. We have observed a preferred orientation (111) with 25 degree angle to the surface normal and this was confirmed by pole figure analysis. The phenomenon of preferred orientation (111) has been explained based on the rate of evaporation. The residual stress by the classical sin2psi technique did not yield any tangible result due to the preferred orientation. The hardness and modulus measured by nanoindentation technique was around 19.5 GPa and 214 GPa. The continuous multicycle indentation test on these films exhibited a stress relaxation.